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2SK2767-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings TO-220AB FAP-2S Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol VDS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 900 3.5 14 35 3.5 258 80 +150 -55 to +150 Unit V A A V A mJ W C C < *2 Tch=150C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=38.6mH, Vcc=90V Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V VGS=0V VGS=35V VDS=0V ID=2.0A VGS=10V ID=2.0A VDS=25V VDS=25V VGS=0V f=1MHz VCC=600V ID=3.5A VGS=10V RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C 3.5 1.0 1000 5.0 1.5 Tch=25C Tch=125C Min. 900 3.5 Typ. 4.0 10 0.2 10 4.0 2.0 450 75 40 20 40 50 25 Max. 4.5 500 1.0 100 5.5 680 120 60 30 60 80 40 Units V V A mA nA S pF 1.0 ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.56 75.0 Units C/W C/W 1 2SK2767-01 Characteristics Power Dissipation PD=f(Tc) FUJI POWER MOSFET Safe operating area ID=f(VDS):D=0.01,Tc=25C 100 90 80 70 10 1 t=0.01s 1s 10s DC 100s 60 PD [W] ID [A] 50 40 30 10 0 1ms 10ms 10 20 10 0 10 -2 -1 t D= T t T 100ms 0 50 100 150 10 0 10 1 10 2 10 3 Tc [ C] o VDS [V] Typical transfer characteristic ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 10 1 ID [A] 10 0 10 -1 10 -2 0 1 2 3 4 5 6 7 8 9 10 VGS [V] Typical forward transconductance gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C 10 1 gfs [s] 10 0 10 -1 10 -1 10 0 10 1 ID [A] 2 2SK2767-01 FUJI POWER MOSFET 16 14 Drain-source on-state resistance RDS(on)=f(Tch):ID=2A,VGS=10V 6.0 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS 5.0 12 4.0 10 max. typ. min. 3.0 RDS(on) [ ] 8 6 max. VGS(th) [V] typ. 2.0 4 1.0 2 0 -50 0 50 100 150 o 0.0 -50 0 50 100 o 150 Tch [ C] Tch [ C] Typical gate charge characteristic VGS=f(Qg):ID=3.5A,Tch=25C 800 Vcc=720V 700 600 500 400 300 200 180V 100 0 40 10n Typical capacitances C=f(VDS):VGS=0V,f=1MHz V 80 35 =1 cc 50V V4 0V 72 30 1n 25 VDS [V] 450V VGS [V] C [F] Ciss 20 15 100p 10 5 0 0 10 20 30 40 50 60 70 80 10p 10 Coss Crss -2 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Forward characteristic of reverse of diode IF=f(VSD):80s Pulse test,VGS=0V 300 Avalanche energy derating Eas=f(starting Tch):Vcc=90V,IAV=3.5A 10 1 250 o Tch=25 C typ. IF [A] 0 200 10 Eas [mJ] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 150 100 10 -1 50 10 -2 0.0 0 0 50 o 100 150 VSD [V] Starting Tch [C] 3 2SK2767-01 FUJI POWER MOSFET 10 1 Transient thermal impedance Zthch=f(t) parameter:D=t/T 0 10 D=0.5 Zthch-c [K/W] 0.2 0.1 10 -1 0.05 0.02 0.01 0 10 -4 t D= T t T 10 -5 10 -2 10 -3 10 -2 10 -1 10 0 10 1 t [s] 4 |
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